| PART |
Description |
Maker |
| 2SK2646-01 2SK2646 |
N-channel MOS-FET
N-channel MOS-FET 4 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI[Fuji Electric]
Fuji Electric Holdings Co., Ltd.
FUJI ELECTRIC CO LTD
|
| 2SJ540 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ548 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| UPA2730TP UPA2730TP-AZ UPA2730TP-E2 UPA2730TP-E1 |
Pch enhancement-type MOS FET
SWITCHING P-CHANNEL POWER MOSFET
SWITCHING N- AND P-CHANNEL POWER MOS FET
42000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, HSOP-8
|
NEC[NEC]
|
| UPA1873 UPA1873GR-9JG UPA1873GR-9JG-E1 UPA1873GR-9 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N沟道MOS场效应晶体管开
N-channel enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| UPA1806GR-9JG UPA1806 UPA1806GR-9JG-E1 UPA1806GR-9 |
CONNECTOR ACCESSORY
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
N Channel enhancement MOS FET
|
NEC Corp.
|
| BSS192 |
P-channel vertical D-MOS intermediate level FET P沟道垂直 D-MOS 中间级场效应
N-channel TrenchMOS TM transistor
|
NXP Semiconductors N.V.
Philips
|
| 2SJ353 2SJ353-T D11216EJ1V0DS00 |
From old datasheet system
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
P-channel MOS-type silicon field effect transistor (-60
|
NEC[NEC]
|
| UPA652TT UPA652TT-E1 UPA652TT-E2 |
P-channel enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
